The Hall coefficient of germanium is typically negative, indicating that the majority charge carriers in germanium are electrons. The value of the Hall coefficient for germanium varies with temperature and doping concentration. At room temperature, the Hall coefficient of intrinsic germanium is approximately -3.8 x 10^-4 m^3/C. For n-type germanium, the Hall coefficient is given by:

$$R_H = \frac{1}{ne}$$

where n is the electron concentration. For p-type germanium, the Hall coefficient is given by:

$$R_H = -\frac{1}{pe}$$

where p is the hole concentration.

The Hall coefficient can be used to determine the type of semiconductor (n-type or p-type), the carrier concentration, and the mobility of the charge carriers.