By Kim Lewis | Updated March 24, 2022
Transistors, built from semiconductors such as silicon or germanium, feature three or more terminals. They act like electronic valves: a small signal applied to the base controls current flow between the emitter and collector. This behavior makes them ideal as switches and amplifiers. The most common variety is the bipolar junction transistor (BJT), which consists of emitter, base, and collector layers.
Check the general description in the datasheet or on the component’s package. It will indicate whether the device is intended for amplification, switching, or dual functionality.
Power dissipation (PD) specifies the maximum continuous power the transistor can absorb without damage. Power devices can dissipate watts, whereas small‑signal transistors handle less than 1 W. For example, the 2N3904 has a maximum PD of 350 mW, classifying it as a small‑signal device.
HFE, also called β (beta), represents the ratio of collector current (IC) to base current (IB) at DC. The 2N3904 lists a minimum HFE of 100. If IB = 2 mA, the resulting IC is at least 200 mA (IC = HFE × IB). Gain may vary between the listed minimum and maximum values.
Breakdown limits define the maximum voltage the transistor can withstand before catastrophic failure. Key parameters are:
The maximum collector current (IC) for the 2N3904 is 200 mA. These figures assume a standard test temperature of 25 °C; real‑world temperatures will lower the allowable currents.
At room temperature, a 2N3904 can handle up to 200 mA of collector current and a 350 mW dissipation. Its gain typically ranges from 100 to 300, with most parts around 200.
PNP datasheets mirror NPN parameters, so the same review steps apply.